Synchrotron area diffractometry as a tool for spatial high-resolution three-dimensional lattice misorientation mapping
| Autoři | |
|---|---|
| Rok publikování | 2003 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | J. Phys. D: Appl. Phys. |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://www.sci.muni.cz/~mikulik/Publications.html#MikulikBaumbachKorytarPLHL-MatStruct-2002 |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | diffraction; wafers; defects; GaAs; X-ray diffraction; lattice tilt |
| Popis | Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-ray diffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformations induced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations. |
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