Effect of substrate bias voltage on the composition, microstructure andmechanical properties of W-B-C coatings

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Publikace nespadá pod Ekonomicko-správní fakultu, ale pod Přírodovědeckou fakultu. Oficiální stránka publikace je na webu muni.cz.
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MIRZAEI Saeed ALISHAHI Mostafa SOUČEK Pavel BURŠÍKOVÁ Vilma ZÁBRANSKÝ Lukáš GRÖNER Lukas BURMEISTER Frank BLUG Bernhard DAUM Philipp MIKŠOVÁ Romana VAŠINA Petr

Rok publikování 2020
Druh Článek v odborném periodiku
Časopis / Zdroj Applied Surface Science
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www https://doi.org/10.1016/j.apsusc.2020.146966
Doi http://dx.doi.org/10.1016/j.apsusc.2020.146966
Klíčová slova magnetron sputtering; protective coatings; substrate bias; W-B-C alloys; fracture resistance
Popis Commercial ceramic protective coatings usually exhibit high hardness, but low ductility impairs their perfor-mance and application-oriented properties. Accordingly, a state-of-the-art magnetron sputtered W-B-C coating can be a promising coating for the tooling industry due to its hard yet tough characteristics.In the present study,we have employed substrate biasing to enhance the delivered energy to the growing film and have investigatedthe effect of bias voltage on the structural and mechanical behavior of W-B-C coatings. The investigations re-vealed that increasing the substrate bias voltage enhanced the re-sputtering of B and C atoms and subsequently varied the chemical composition of the coatings and significantly decreased the growthrate. It also enhanced the crystallinity of the coatings. We demonstrate how the bias voltage led to an unusual transition from a featureless to a columnar microstructure. Furthermore, it was observed that as the substrate bias voltage increased from 0V to -125V, the compositional and structural changes resulted in a slight decrease of the hardness, while a further increase in the biasvoltage to -200V enhanced the hardness. This increase was attributed to the suppression of dislocation movement and grain boundary deformation processes by solute segregation and by lattice defects.
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