Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

• Autoři: COLLAR K.; LI J.; JIAO W.; GUAN Y.; LOSURDO M.; HUMLÍČEK Josef; BROWN A.S.
• Rok publikování: 2017
• Druh: Článek v odborném periodiku
• Časopis / Zdroj: AIP Advances
• Fakulta / Pracoviště MU: Přírodovědecká fakulta
• www: https://aip.scitation.org/doi/10.1063/1.4986751
• Doi: http://dx.doi.org/10.1063/1.4986751
• Klíčová slova: MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GAAS1-XBIX; INTERFACE; GROWTH; GAP
• Popis: We investigate the change of the valence band energy of GaAs1-xBix as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that similar to 75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.

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