Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

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Publikace nespadá pod Ekonomicko-správní fakultu, ale pod Přírodovědeckou fakultu. Oficiální stránka publikace je na webu muni.cz.
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SKÁCELOVÁ Dana DANILOV Vladimir SCHÄFER Jan QUADE Antje SŤAHEL Pavel ČERNÁK Mirko MEICHSNER Jürgen

Rok publikování 2013
Druh Článek v odborném periodiku
Časopis / Zdroj Materials Science & Engineering B
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
www http://www.sciencedirect.com/science/article/pii/S0921510712004989
Doi http://dx.doi.org/10.1016/j.mseb.2012.10.017
Obor Fyzika plazmatu a výboje v plynech
Klíčová slova Atmospheric pressure plasma; Plasma oxidation; Silicon dioxide; Coplanar DBD
Popis In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation.
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