XPS and Ellipsometric Study of DLC/Silicon Interface
| Authors | |
|---|---|
| Year of publication | 2001 |
| Type | Article in Periodical |
| Magazine / Source | Vacuum |
| MU Faculty or unit | |
| Citation | |
| Web | http://hydra.physics.muni.cz/~franta/bib/VAC61_269.html |
| Field | Plasma physics |
| Keywords | DLC films; XPS; Ellipsometry; Interface |
| Description | Diamond-like carbon (DLC) films were prepared by plasma enhanced CVD from the mixture of methane and argon on silicon substrates. Films were characterized by multi-sample modification of variable angle spectroscopic ellipsometry. The ellipsometry showed that there is a transition interlayer between the DLC film and the silicon substrate that cannot be attributed to a thin silicon dioxide layer but rather to amorphous silicon and/or modified oxide layer. TRIM calculations revealed that argon or carbon ions could not produce a significant layer of amorphous silicon because the depth of target atom displacements is bellow the thickness of a native oxide layer. The chemical composition of a DLC film profile including a DLC/silicon interface was studied by X-ray photoelectron spectroscopy (XPS) coupled with an argon sputtering of the 34 nm thick DLC film. The DLC/silicon interface composed from less than 6 % of oxygen and gradually decreasing and increasing carbon and silicon percentage, respectively. |
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