Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

Warning

This publication doesn't include Faculty of Economics and Administration. It includes Central European Institute of Technology. Official publication website can be found on muni.cz.

Authors	KLENOVSKÝ Petr KŘÁPEK Vlastimil HUMLÍČEK Josef
Year of publication	2016
Type	Article in Periodical
Magazine / Source	ACTA PHYSICA POLONICA A
MU Faculty or unit	Central European Institute of Technology
Citation
Web	http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap12.pdf
Doi	http://dx.doi.org/10.12693/APhysPolA.129.A-62
Field	Solid matter physics and magnetism
Keywords	quantum dots; type-II bandalignment; quantum computing; theory
Description	We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 ueV/325 ueV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement.
Related projects:	CEITEC - Central European Institute of Technology Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies Struktura, elektronová struktura a optická odezva pokročilých materiálů IV Výzkum a vývoj nových technologií výroby bipolárního tranzistoru s izolovaným hradlem (TIGBT)