Project information
Physical properties of new materials and layered structures
- Project Identification
- MSM 143100002
- Project Period
- 1/1999 - 12/2004
- Investor / Pogramme / Project type
-
Ministry of Education, Youth and Sports of the CR
- Research Intents
- MU Faculty or unit
- Faculty of Science
- Keywords
- semiconductors;low-dimensional structures;quantum dots;organic layers;ferroelectrics;high-temperature superconductors;ellipsometry;reflectometry;x-ray diffraction;x-ray reflection
Results
Publications
Total number of publications: 212
1997
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MBE Growth and Structural Characterization of SiC/SiGe Superlattices
J. Cryst. Growth, year: 1997, volume: 1997, edition: 175
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Reciprocal space mapping on Si 1-x C x epilayers and Si n/C/Si n superlattices
Journal of crystal growth, year: 1997, volume: (19)1997, edition: 2-4
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Stacked Josephson junction based on Nb/Si superlattice
Low Temperature Physics, year: 1997, volume: 1997, edition: 106
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Strain relaxation in high electron mobility Si 1-x Ge x/Si structures
J. Appl. Phys., year: 1997, volume: (82)1997, edition: 15
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Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques
Thin Solid Films, year: 1997, volume: 1997, edition: 303
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Vibrational modes in Si x Ge 1-x alloys: temperature and compositional dependence
Acta Physica Polonica A, year: 1997, volume: (92)1997, edition: 5
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X-ray reflectivity reciprocal space mapping of strained SiG /Si superlattices
II Nuovo Cimento, year: 1997, volume: 1997, edition: 19 D
1996
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Dynamical theory of diffraction of particles: Ewald's approach. I
Scripta Fac. Sci. Nat. Univ. Purk. Brun., year: 1996, volume: 1996, edition: 26
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Elastic strains in GaAs/AlAs quantum dots studied by high resolution. X-ray diffraction
Solid - State Electronics, year: 1996, volume: 40(1996), edition: 1-8
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Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs
Appl. Phys. Lett., year: 1996, volume: 69(1996), edition: 17