Hydrogenation of platinum introduced in silicon by radiation enhanced diffusion

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Authors	HAZDRA Pavel KOMARNITSKYY Volodymyr BURŠÍKOVÁ Vilma
Year of publication	2009
Type	Article in Periodical
Magazine / Source	Materials Science and Engineering
MU Faculty or unit	Faculty of Science
Citation
Doi	http://dx.doi.org/10.1016/j.mseb.2008.11.038
Field	Electronics amd optoelectronics, electrotechnics
Keywords	diffusion; hydrogenation; platinum; silicon
Description	The paper deals with hydrogenation of platinum atoms introduced in silicon by radiation enhanced diffusion. The interaction of defects and arising deep levels are investigated by means of deep level transient spectroscopy.
Related projects:	Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface