Oxygen precipitation studied by x-ray diffraction techniques

Warning

This publication doesn't include Faculty of Economics and Administration. It includes Central European Institute of Technology. Official publication website can be found on muni.cz.

Authors	MEDUŇA Mojmír CAHA Ondřej RŮŽIČKA Jiří BERNATOVÁ Silvie SVOBODA Milan BURŠÍK Jiří
Year of publication	2011
Type	Article in Periodical
Magazine / Source	Solid State Phenomena
MU Faculty or unit	Central European Institute of Technology
Citation
Field	Solid matter physics and magnetism
Keywords	Czochralski silicon; oxygen precipitates; x-ray Laue diffraction
Description	We report on study of oxygen precipitates grown in Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry and Laue transmission geometry.
Related projects:	Physical and chemical properties of advanced materials and structures Nucleation and growth of oxygen precipitates in silicon Strain engineering in diluted magnetic semiconductors Struktura, elektronová struktura a optická odezva pokročilých materiálů CEITEC - Central European Institute of Technology