Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules

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Authors

KŘÁPEK Vlastimil KLENOVSKÝ Petr RASTELLI Armando SCHMIDT Oliver G MUNZAR Dominik

Year of publication 2010
Type Article in Periodical
Magazine / Source Journal of Physics: Conference Series
MU Faculty or unit

Faculty of Science

Citation
Web http://iopscience.iop.org/1742-6596/245/1/012027
Field Solid matter physics and magnetism
Keywords Excitons and related phenomena; Tunneling; Quantum dots; Semiconductor compounds
Description We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots.
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