Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction
| Authors | |
|---|---|
| Year of publication | 2009 |
| Type | Article in Periodical |
| Magazine / Source | Physica stat.sol.(a) |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | interdiffusion; x-ray diffraction; multilayers |
| Description | We have investigated SiGe/Si multilayers with Ge content 70% and 90% annealed in-situ at temperatures in the range 600-700 C by x-ray diffraction. |
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