Annealing studies of high Ge composition Si/SiGe multilayers

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Authors

MEDUŇA Mojmír NOVÁK Jiří HOLÝ Václav BAUER Günther FALUB Claudiu TSUJINO Soichiro MÜLLER Elisabeth GRÜTZMACHER Detlev CAMPIDELLI Yves KERMARREC Olivier BENSAHEL Daniel

Year of publication 2004
Type Article in Periodical
Magazine / Source Zeitschrift fur Kristalographie
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords Reflectivity; X-ray diffraction; Annealing; Diffusion; Si/SiGe multiple quantum wells
Description Temperature stability of SiGe/Si (80% Ge) multilayers was studied using x-ray reflectivity during in-situ annealing at temperature 810C.
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