Electrical Properties of SiOxHyCz Coatings Prepared by PECVD
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Proceedings |
| Conference | 15th Symposium on Aplications of Plasma Processes |
| MU Faculty or unit | |
| Citation | |
| Field | Plasma physics |
| Keywords | thin films; electrical properties |
| Description | It is well known that MIM structures exhibit various high-field processes, which may be either electrode-limited (e.g. tunneling, Schottky-barrier emission) or bulk-limited (e.g. space-charge-limited conduction, Poole-Frenkel conduction) [1]. Thin films prepared using PECVD exhibited Pool-Frenkel conductivity at lower voltages and tunnelling at higher voltages. This behaviour was indicated by a linear dependence of lnI on U1/2 or lnI on 1/U, where I is the current and U is the applied voltage. |
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