Modification of the optical parameters of silicon thin films due to light scattering

Warning

This publication doesn't include Faculty of Economics and Administration. It includes Faculty of Education. Official publication website can be found on muni.cz.
Authors

SLÁDEK Petr SŤAHEL Pavel ŠŤASTNÝ Jiří

Year of publication 2002
Type Article in Periodical
Magazine / Source Journal of Non-Crystalline Solids
MU Faculty or unit

Faculty of Education

Citation
Doi http://dx.doi.org/10.1016/S0022-3093(01)00952-8
Field Solid matter physics and magnetism
Keywords silicon thin films; absorption coefficient; light sacttering
Description The enhanced light absorption observed in microcrystalline and polymorphous hydrogenated silicon films may partly be due to light scattering. To estimate the importance of this phenomenon. we used the new 'photocurrent induced by light scattering' method. The exciting beam is impinging on the sample outside the inter-electrode region: by changing the position of the exciting light spot and the photon energy. it is possible to estimate the light scattering effects. We applied this method to films of different materials and checked our conclusions by using the modified constant photocurrent method.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.