GID study of strains in Si due to patterned SiO2

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Authors

DANIEL A.; HOLÝ Václav ZHUANG Y. ROCH T. GRENZER J. BOCHNÍČEK Zdeněk BAUER G.

Year of publication 2001
Type Article in Periodical
Magazine / Source J. Phys. D: Appl. Phys.
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords GID; stress;SiO2
Description Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved.
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