GID study of strains in Si due to patterned SiO2
Authors | |
---|---|
Year of publication | 2001 |
Type | Article in Periodical |
Magazine / Source | J. Phys. D: Appl. Phys. |
MU Faculty or unit | |
Citation | |
Field | Solid matter physics and magnetism |
Keywords | GID; stress;SiO2 |
Description | Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved. |
Related projects: |