GID study of strains in Si due to patterned SiO2
| Authors | |
|---|---|
| Year of publication | 2001 |
| Type | Article in Periodical |
| Magazine / Source | J. Phys. D: Appl. Phys. |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | GID; stress;SiO2 |
| Description | Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved. |
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