Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping

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Authors	LI J.H. HOLÝ Václav
Year of publication	1995
Type	Article in Periodical
Magazine / Source	Semicond. Sci. Technol.
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Related projects:	Physical properties of new materials and layered structures