Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

Warning

This publication doesn't include Faculty of Economics and Administration. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	GABLECH I. SVATOS V. CAHA Ondřej DUBROKA Adam PEKAREK J. KLEMPA J. NEUZIL P. SCHNEIDER M. ŠIKOLA Tomáš
Year of publication	2019
Type	Article in Periodical
Magazine / Source	Thin Solid Films
MU Faculty or unit	Faculty of Science
Citation
Web	http://dx.doi.org/10.1016/j.tsf.2018.12.035
Doi	http://dx.doi.org/10.1016/j.tsf.2018.12.035
Keywords	Ion-beam sputtering deposition; Kaufman ion-beam source; Aluminum nitride thin film; (001) preferential orientation; X-ray diffraction; Optical properties; Ellipsometry; d(33) piezoelectric coefficient
Description	We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 degrees C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d(33) = (7.33 +/- 0.08) pC.N-1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.
Related projects:	CEITEC Nano