X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers

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Authors	MEDUŇA Mojmír KREILIGER Thomas MAUCERI Marco PUGLISI Marco MANCARELLA Fulvio LA VIA Francesco CRIPPA Danilo MIGLIO Leo VON KÄNEL Hans
Year of publication	2019
Type	Article in Periodical
Magazine / Source	Journal of Crystal Growth
MU Faculty or unit	Faculty of Science
Citation
Web	Full Text
Doi	http://dx.doi.org/10.1016/j.jcrysgro.2018.10.046
Keywords	Semiconducting silicon compounds; Carbides; High resolution X-ray diffraction; Planar defects; Low dimensional structures
Description	We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0].
Related projects:	CEITEC Nano CEITEC 2020