Growth temperature dependent strain in relaxed Ge microcrystals

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Authors

MEDUŇA Mojmír FALUB Claudiu Valentin ISA Fabio VON KÄNEL Hans

Year of publication 2018
Type Article in Periodical
Magazine / Source Thin Solid Films
MU Faculty or unit

Faculty of Science

Citation
Doi http://dx.doi.org/10.1016/j.tsf.2018.08.033
Keywords Patterned substrates; Silicon substrates; Germanium; Nanocrystals; X-ray diffraction; Crystal Defects; Low energy plasma enhanced chemical vapor deposition
Description Using high resolution X-ray diffraction with reciprocal space mapping, we obtain the lattice parameters, strain and degree of relaxation at different growth temperatures of microcrystals.
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