Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

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Authors	MEDUŇA Mojmír ISA Fabio JUNG Arik MARZEGALLI Anna ALBANI Marco ISELLA Giovanni ZWEIACKER Kai MIGLIO Leo VON KÄNEL Hans
Year of publication	2018
Type	Article in Periodical
Magazine / Source	Journal of Applied Crystallography
MU Faculty or unit	Faculty of Science
Citation
Web	https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576718001450
Doi	http://dx.doi.org/10.1107/S1600576718001450
Field	Solid matter physics and magnetism
Keywords	scanning X-ray nanodiffraction; lattice bending; graded SiGe microcrystals; strain relaxation
Description	The scanning X-ray nanodiffraction technique is used to reconstruct the three- dimensional (3D) distribution of lattice strain and Ge concentration in compositionally graded Si1-xGex microcrystals epitaxially grown on Si pillars.
Related projects:	CEITEC - Central European Institute of Technology CEITEC Nano+ (CEITEC Nano)