SiO2/Si etching in atmospheric pressure hydrogen DBD plasma
| Authors | |
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| Year of publication | 2015 |
| Type | Conference abstract |
| MU Faculty or unit | |
| Citation | |
| Description | The SiO2/Si etching was studied in DCSBD discharge generated in pure hydrogen at atmospheric pressure and room temeperature conditions. The estimated etching rate of SiO2 was approx. 1 nm/min. |
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