Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen

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Authors

FRANTA Daniel NEČAS David ZAJÍČKOVÁ Lenka OHLÍDAL Ivan

Year of publication 2014
Type Article in Periodical
Magazine / Source Thin Solid Films
MU Faculty or unit

Faculty of Science

Citation
Web http://ac.els-cdn.com/S0040609014003514/1-s2.0-S0040609014003514-main.pdf?_tid=0ab31e60-cd51-11e4-974b-00000aacb361&acdnat=1426671048_33720b9a5f3421f518aa642d5757ebfa
Doi http://dx.doi.org/10.1016/j.tsf.2014.03.059
Field Solid matter physics and magnetism
Keywords Dispersion model; Sum rule; Transition strength; Crystalline silicon
Attached files
Description The distribution of the total transition strength, i.e. the right hand side of the integral form of Thomas-Reiche-Kuhn sum rule, into individual absorption processes is described for crystalline silicon containing interstitial oxygen. Utilization of the sum rule allows the construction of a dispersion model covering all elementary excitations from phonon absorption to core electron excitations. The dependence of transition strength of individual electronic and phonon contributions on temperature and oxygen content is described. (C) 2014 Elsevier B.V. All rights reserved.
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