3D Heteroepitaxy of Mismatched Semiconductors on Silicon

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Authors

FALUB Claudiu Valentin KREILIGER Thomas ISA Fabio TABOADA Alfonso MEDUŇA Mojmír PEZZOLI Fabio BERGAMASCHINI Roberto MARZEGALLI Anna MÜLLER Elisabeth CHRASTINA Daniel ISELLA Giovanni NEELS Antonia NIEDERMANN Philippe DOMMANN Alex MIGLIO Leo VON KÄNEL Hans

Year of publication 2014
Type Article in Periodical
Magazine / Source Thin Solid Films
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://www.sciencedirect.com/science/article/pii/S0040609013017057
Doi http://dx.doi.org/10.1016/j.tsf.2013.10.094
Field Solid matter physics and magnetism
Keywords Monolithic integration; Epitaxial growth; Ge; GaAs; Patterned Si substrates; Scanning X-ray nano-diffraction; Room-temperature photoluminescence; X-ray detectors
Description We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defect-free, micron-sized crystals.
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