3D Heteroepitaxy of Mismatched Semiconductors on Silicon

Warning

This publication doesn't include Faculty of Economics and Administration. It includes Central European Institute of Technology. Official publication website can be found on muni.cz.

Authors	FALUB Claudiu Valentin KREILIGER Thomas ISA Fabio TABOADA Alfonso MEDUŇA Mojmír PEZZOLI Fabio BERGAMASCHINI Roberto MARZEGALLI Anna MÜLLER Elisabeth CHRASTINA Daniel ISELLA Giovanni NEELS Antonia NIEDERMANN Philippe DOMMANN Alex MIGLIO Leo VON KÄNEL Hans
Year of publication	2014
Type	Article in Periodical
Magazine / Source	Thin Solid Films
MU Faculty or unit	Central European Institute of Technology
Citation
Web	http://www.sciencedirect.com/science/article/pii/S0040609013017057
Doi	http://dx.doi.org/10.1016/j.tsf.2013.10.094
Field	Solid matter physics and magnetism
Keywords	Monolithic integration; Epitaxial growth; Ge; GaAs; Patterned Si substrates; Scanning X-ray nano-diffraction; Room-temperature photoluminescence; X-ray detectors
Description	We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defect-free, micron-sized crystals.
Related projects:	CEITEC - Central European Institute of Technology Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery