Project information
Physical properties of new materials and layered structures
- Project Identification
- MSM 143100002
- Project Period
- 1/1999 - 12/2004
- Investor / Pogramme / Project type
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Ministry of Education, Youth and Sports of the CR
- Research Intents
- MU Faculty or unit
- Faculty of Science
- Keywords
- semiconductors;low-dimensional structures;quantum dots;organic layers;ferroelectrics;high-temperature superconductors;ellipsometry;reflectometry;x-ray diffraction;x-ray reflection
Results
Publications
Total number of publications: 212
2000
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Anomaly of oxygen bond-bending mode at 320 cm-1 and additional absorption peak in the c-axis infrared conductivity of underdoped YBa2Cu3O7 single crystals
Physical Review B, year: 2000, volume: 61, edition: 1
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Effect of ion-beam polishing on the interface quality in a Ti/C multilayer mirror for "water window"
European Powder Diffraction, year: 2000, volume: 321-3, edition: 1,2
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Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si supertattice
Physical Review B, year: 2000, volume: 2000, edition: 62
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Infrared vibrations in LaSrGaO4 and LaSrAlO4
Phys. Rev. B, year: 2000, volume: 61, edition: 21
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In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction
Physica B, year: 2000, volume: 2000, edition: 283
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Interface study of a Co/Si/W/Si multilayers with enhanced thermal stability
J. Appl. Crystallography, year: 2000, volume: 2000, edition: 33
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Lateral and vertical ordering of self-assembled PbSe quantum dots studied by high-resolution X-ray diffraction
Physica B, year: 2000, volume: 2000, edition: 283
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Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice
Appl. Phys. Lett., year: 2000, volume: 76, edition: 20
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RTG reflexe laterálních struktur SiGe
13. konference slovenských a českých fyzikov, year: 2000
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Self-organized growth of three-dimensional IV-VI semiconductor quantum-dot crystals with fcc-like vertical stacking and tunable lattice constant
Surface science, year: 2000, volume: 2000, edition: 454-456