Air-stable, non-volatile resistive memory based on hybrid organic/inorganic nanocomposites

Investor logo

Warning

This publication doesn't include Faculty of Economics and Administration. It includes Central European Institute of Technology. Official publication website can be found on muni.cz.
Authors

CASULA Giulia COSSEDDU Piero BUSBY Yan PIREAUX Jean-Jacques ROSOWSKI Marcin SZCZESNA Beata Tkacz SOLIWODA Katarzyna CELICHOWSKI Grzegorz GROBELNY Jaroslaw NOVÁK Jiří BANERJEE Rupak SCHREIBER Frank BONFIGLIO Annalisa

Year of publication 2015
Type Article in Periodical
Magazine / Source ORGANIC ELECTRONICS
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://www.sciencedirect.com/science/article/pii/S1566119915000026
Doi http://dx.doi.org/10.1016/j.orgel.2015.01.001
Field Solid matter physics and magnetism
Keywords Organic memories; Resistive switching; Metal nanoparticles; Filamentary conduction
Description A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.