Air-stable, non-volatile resistive memory based on hybrid organic/inorganic nanocomposites
Authors | |
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Year of publication | 2015 |
Type | Article in Periodical |
Magazine / Source | ORGANIC ELECTRONICS |
MU Faculty or unit | |
Citation | |
Web | http://www.sciencedirect.com/science/article/pii/S1566119915000026 |
Doi | http://dx.doi.org/10.1016/j.orgel.2015.01.001 |
Field | Solid matter physics and magnetism |
Keywords | Organic memories; Resistive switching; Metal nanoparticles; Filamentary conduction |
Description | A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching. |
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