Oxidation of Silicon Surface by DCSBD
| Authors | |
|---|---|
| Year of publication | 2012 |
| Type | Article in Proceedings |
| Conference | NANOCON 2012, 4th INTERNATIONAL CONFERENCE |
| MU Faculty or unit | |
| Citation | |
| Web | http://www.nanocon.eu/files/proceedings/04/reports/772.pdf |
| Field | Plasma physics |
| Keywords | Coplanar DBD; silicon dioxide; oxidation; atmospheric pressure plasma |
| Description | In the present work plasma oxidation of crystalline silicon (c-Si) surface in diffuse coplanar surface barrier discharge (DCSBD) generated at atmospheric pressure has been studied. Silicon surface has been oxidized in oxygen and argon plasma. The surface properties have been studied by means scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses. It was found that thin layer of amorphous silicon dioxide during the short treatment time was formed. Oxidation by DCSBD could represent new alternative of a low cost and fast oxidation process. |
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